Nanostructure fabrication using lithium fluoride films as an electron beam resist

Homogeneous and quasiamorphous lithium fluoride based films have been deposited as a new ultrahigh resolution electron beam resist. The exposure characteristics of this self‐developing positive tone resist are discussed. Compared to other metal halide films, a high sensitivity is the most important advantage, while the resolution limit is also far below 10 nm. Concerning pattern transfer, the properties of this resist in various reactive ion etch processes and the capability for a lift‐off process were investigated.