P-109: Reduced Contact Resistance with MoOxInjection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level

We investigated the contact resistance of the OTFTs based on dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene (DNTT) as a representative organic semiconductors with deep HOMO level. We confirmed a dramatic decrease in the contact resistance with the MoOx injection layer by transmission line method and y-function method.