P-109: Reduced Contact Resistance with MoOxInjection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level

MLA

Hyeok Kim, et al. “P-109: Reduced Contact Resistance with MoOxInjection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level.” SID Symposium Digest of Technical Papers, vol. 47, May 2016, pp. 1535–38. EBSCOhost, https://doi.org/10.1002/sdtp.10993.

APA

Hyeok Kim, Jeongkyun Roh, Hyeonwoo Shin, Heebum Roh, & Changhee Lee. (2016). P-109: Reduced Contact Resistance with MoOxInjection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level. SID Symposium Digest of Technical Papers, 47, 1535–1538. https://doi.org/10.1002/sdtp.10993

Chicago

Hyeok Kim, Jeongkyun Roh, Hyeonwoo Shin, Heebum Roh, and Changhee Lee. 2016. “P-109: Reduced Contact Resistance with MoOxInjection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level.” SID Symposium Digest of Technical Papers 47 (May): 1535–38. doi:10.1002/sdtp.10993.