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High output power GaInAsP/InP superluminescent diode at 1.3 μm
- Source :
- Electronics Letters. 24:1507
- Publication Year :
- 1988
- Publisher :
- Institution of Engineering and Technology (IET), 1988.
-
Abstract
- We have developed a 1.3 μm superluminescent diode using revolutionary structure. A light diffusion surface is placed diagonally on the active layer within the device to suppress the lasing action. Superluminescent diode characteristics were achieved in the range 0–50°C, and the coupled power into a single-mode fibre reached 1 mW.
Details
- ISSN :
- 00135194
- Volume :
- 24
- Database :
- OpenAIRE
- Journal :
- Electronics Letters
- Accession number :
- edsair.doi...........9ff6f232abf32314e02a510dc1d5b784