Cite
High output power GaInAsP/InP superluminescent diode at 1.3 μm
MLA
Y. Kashima, et al. “High Output Power GaInAsP/InP Superluminescent Diode at 1.3 Μm.” Electronics Letters, vol. 24, Jan. 1988, p. 1507. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........9ff6f232abf32314e02a510dc1d5b784&authtype=sso&custid=ns315887.
APA
Y. Kashima, Kobayashi Masao, & H. Takano. (1988). High output power GaInAsP/InP superluminescent diode at 1.3 μm. Electronics Letters, 24, 1507.
Chicago
Y. Kashima, Kobayashi Masao, and H. Takano. 1988. “High Output Power GaInAsP/InP Superluminescent Diode at 1.3 Μm.” Electronics Letters 24 (January): 1507. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........9ff6f232abf32314e02a510dc1d5b784&authtype=sso&custid=ns315887.