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$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
- Source :
- IEEE Electron Device Letters. 30:703-705
- Publication Year :
- 2009
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2009.
-
Abstract
- A novel method of fabricating HfOx-based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (> 105 cycles), robust data retention at high temperature, and fast operation speed (< 50 ns), have been demonstrated. The resistive memory based on AlCu/HfOx stacked layer in this letter shows promising application in the next generation of nonvolatile memory.
- Subjects :
- Hardware_MEMORYSTRUCTURES
Materials science
business.industry
Electrical engineering
Integrated circuit
Electronic, Optical and Magnetic Materials
Resistive random-access memory
Anode
law.invention
Non-volatile memory
Capacitor
Memory cell
law
Electrode
Optoelectronics
Electrical and Electronic Engineering
Thin film
business
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........9d7f8509d46df2096c90d42ef9b10cfd