Cite
$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
MLA
Yu-Sheng Chen, et al. “$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode.” IEEE Electron Device Letters, vol. 30, July 2009, pp. 703–05. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........9d7f8509d46df2096c90d42ef9b10cfd&authtype=sso&custid=ns315887.
APA
Yu-Sheng Chen, Heng Yuan Lee, Ching-Chiun Wang, Pang-Shiu Chen, Ming-Jinn Tsai, Frederick T. Chen, Tai-Yuan Wu, Pei-Jer Tzeng, C.-H. Lin, & Chenhsin Lien. (2009). $\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode. IEEE Electron Device Letters, 30, 703–705.
Chicago
Yu-Sheng Chen, Heng Yuan Lee, Ching-Chiun Wang, Pang-Shiu Chen, Ming-Jinn Tsai, Frederick T. Chen, Tai-Yuan Wu, Pei-Jer Tzeng, C.-H. Lin, and Chenhsin Lien. 2009. “$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode.” IEEE Electron Device Letters 30 (July): 703–5. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........9d7f8509d46df2096c90d42ef9b10cfd&authtype=sso&custid=ns315887.