Preparation and Characterization of Copper Films Deposited in Hydrogen Remote Plasma by Copper(II) Acetylacetonate

High purity and low resistive copper films are in high demand for ultralarge scale integrated process technology. By remote plasma-enhanced chemical vapor deposition, high purity Cu films can be prepared using copper(II) acetylacetonate [Cu(acac) 2 ] as a source material. Depositions were carried out with three types of flow tubes in order to study the reaction steps of the film formation. It is found that Cu films could be deposited only upon reaction of atomic hydrogen (H * ), but not with ultraviolet radiation. Hydrogen remote plasma method makes Cu films damage free from ion impacts and free from contaminants of carbon, oxygen, and others. The resistivities of Cu film measured are about 1.8 μΩ cm which is close to the intrinsic value (1.72 μΩ cm) of bulk copper