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Control of Bump Morphology in Lead Free Solder Plating for Higher Density Packaging
- Source :
- Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:001643-001669
- Publication Year :
- 2014
- Publisher :
- IMAPS - International Microelectronics Assembly and Packaging Society, 2014.
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Abstract
- Solder bumping is one of the key technologies for flip chip connection. Flip chip connection has been moving forward to its further downsizing and higher integration with new technologies, such as Cu pillar, micro bump and Through Silicon Via (TSV). Unlike some methods like solder printing and ball mounting, electroplating is a very promising technology for upcoming finer bump formation. We have been developing SnAg plating chemical while taking technology progress and customers' needs into consideration at the same time. Today, we see more variety of requests including for high speed plating to increase the productivity and also for high density packaging such as narrowing the bump pitch itself and downsizing of the bump diameter. To meet these technical needs, some adjustments of plating chemical will be necessary. This time we developed new plating chemicals to correspond to bump miniaturization. For instance, our new SnAg chemical can control bump morphology while maintaining the high deposition speed. With our new plating chemicals, we can deposit mushroom bumps that grow vertically against the resist surface, also this new chemicals work effectively to prevent short-circuit between mushroom bumps with fine pitch from forming. In addition, we succeeded in developing high speed Cu pillar plating chemicals that can control the surface morphology to create different shapes. We'd like to present our updates on controlling bump morphology for various applications.
Details
- ISSN :
- 23804491
- Volume :
- 2014
- Database :
- OpenAIRE
- Journal :
- Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)
- Accession number :
- edsair.doi...........872d431322b7e3766fbd975865df30bb
- Full Text :
- https://doi.org/10.4071/2014dpc-wp24