Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor

Authors :: Atsushi Murakoshi
Masahiro Kashiwagi
Masaki Hotta
Masahiko Yoshiki
Masaharu Watanabe
Ichiro Mizushima
Source :: Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Publication Year :: 1993
Publisher :: The Japan Society of Applied Physics, 1993.
Abstract: A high hole concentration region of about 1×1021 cm-3 was generated without any post-annealing by the implantation of high doses of boron into silicon substrates. X-ray photoelectron spectroscopy (XPS) measurement and Fourier transform IR spectroscopy (FTIR) absorption spectra revealed that B12 icosahedra were created in as-implanted samples. A new model of the generation of holes is proposed in which B12 icosahedron acts as a double acceptor.

Subjects :: Materials science
X-ray photoelectron spectroscopy
Absorption spectroscopy
Silicon
chemistry
Doping
Analytical chemistry
Infrared spectroscopy
chemistry.chemical_element
Nanotechnology
Fourier transform infrared spectroscopy
Boron
Acceptor

Database :: OpenAIRE
Journal :: Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........871f834e0918f20ff213459ca9843176
Full Text :: https://doi.org/10.7567/ssdm.1993.s-ii-7

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