Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor

MLA

Atsushi Murakoshi, et al. “Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor.” Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Jan. 1993. EBSCOhost, https://doi.org/10.7567/ssdm.1993.s-ii-7.

APA

Atsushi Murakoshi, Masahiro Kashiwagi, Masaki Hotta, Masahiko Yoshiki, Masaharu Watanabe, & Ichiro Mizushima. (1993). Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor. Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials. https://doi.org/10.7567/ssdm.1993.s-ii-7

Chicago

Atsushi Murakoshi, Masahiro Kashiwagi, Masaki Hotta, Masahiko Yoshiki, Masaharu Watanabe, and Ichiro Mizushima. 1993. “Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor.” Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, January. doi:10.7567/ssdm.1993.s-ii-7.