Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy

Authors :: Takayuki Muro
Toshio Takahashi
Yoshihisa Harada
Hiroshi Tochihara
Satoru Tanaka
Y. Tamenori
Tetsuroh Shirasawa
Toyohiko Kinoshita
Shik Shin
Takashi Tokushima
Source :: Materials Science Forum. :15-19
Publication Year :: 2011
Publisher :: Trans Tech Publications, Ltd., 2011.
Abstract: The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

Subjects :: Silicon oxynitride
Materials science
Photoemission spectroscopy
Mechanical Engineering
Chemical shift
Analytical chemistry
Condensed Matter Physics
Epitaxy
Spectral line
chemistry.chemical_compound
Crystallography
chemistry
Mechanics of Materials
Silicon carbide
General Materials Science
Spectroscopy
Layer (electronics)

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