Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy

MLA

Takayuki Muro, et al. “Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy.” Materials Science Forum, Feb. 2011, pp. 15–19. EBSCOhost, https://doi.org/10.4028/www.scientific.net/msf.675-677.15.

APA

Takayuki Muro, Toshio Takahashi, Yoshihisa Harada, Hiroshi Tochihara, Satoru Tanaka, Y. Tamenori, Tetsuroh Shirasawa, Toyohiko Kinoshita, Shik Shin, & Takashi Tokushima. (2011). Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy. Materials Science Forum, 15–19. https://doi.org/10.4028/www.scientific.net/msf.675-677.15

Chicago

Takayuki Muro, Toshio Takahashi, Yoshihisa Harada, Hiroshi Tochihara, Satoru Tanaka, Y. Tamenori, Tetsuroh Shirasawa, Toyohiko Kinoshita, Shik Shin, and Takashi Tokushima. 2011. “Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy.” Materials Science Forum, February, 15–19. doi:10.4028/www.scientific.net/msf.675-677.15.