A novel nanoscale resist using 10-undecanoic acid monolayers on silicon dioxide

In this paper, we discuss the use of 10-undecanoic acid monolayers on silicon dioxide films in a novel electron beam patterning process. The monolayers are locally fixed by electron exposure and subsequently act as an oxide etch initiator in HF vapor, thereby allowing the oxide to be patterned. We present the effects of various post-exposure solvent treatments on etch rate enhancement and selectivity. The influence of electron beam dose on the etching of thermal and deposited SiO 2 is also shown.