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Wide bandgap GaN-based semiconductors for spintronics
- Source :
- Journal of Physics: Condensed Matter. 16:R209-R245
- Publication Year :
- 2004
- Publisher :
- IOP Publishing, 2004.
-
Abstract
- Recent results on achieving ferromagnetism in transition-metal-doped GaN, A1N and related materials are discussed. The field of semiconductor spintronics seeks to exploit the spin of charge carrier ...
- Subjects :
- Spintronics
Condensed matter physics
Condensed Matter::Other
Chemistry
Band gap
business.industry
Transistor
Wide-bandgap semiconductor
Magnetic semiconductor
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Engineering physics
law.invention
Condensed Matter::Materials Science
Semiconductor
Ferromagnetism
law
Condensed Matter::Strongly Correlated Electrons
General Materials Science
Charge carrier
business
Subjects
Details
- ISSN :
- 1361648X and 09538984
- Volume :
- 16
- Database :
- OpenAIRE
- Journal :
- Journal of Physics: Condensed Matter
- Accession number :
- edsair.doi...........7bf9ae5cea544a8ad89b4044e22cf46f
- Full Text :
- https://doi.org/10.1088/0953-8984/16/7/r03