Wide bandgap GaN-based semiconductors for spintronics

MLA

Arthur F. Hebard, et al. “Wide Bandgap GaN-Based Semiconductors for Spintronics.” Journal of Physics: Condensed Matter, vol. 16, Feb. 2004, pp. R209–45. EBSCOhost, https://doi.org/10.1088/0953-8984/16/7/r03.

APA

Arthur F. Hebard, Cammy R. Abernathy, Weimin Chen, Stephen J. Pearton, G. T. Thaler, Yun Daniel Park, Irina Buyanova, Fan Ren, David P. Norton, R. M. Frazier, & J. M. Zavada. (2004). Wide bandgap GaN-based semiconductors for spintronics. Journal of Physics: Condensed Matter, 16, R209–R245. https://doi.org/10.1088/0953-8984/16/7/r03

Chicago

Arthur F. Hebard, Cammy R. Abernathy, Weimin Chen, Stephen J. Pearton, G. T. Thaler, Yun Daniel Park, Irina Buyanova, et al. 2004. “Wide Bandgap GaN-Based Semiconductors for Spintronics.” Journal of Physics: Condensed Matter 16 (February): R209–45. doi:10.1088/0953-8984/16/7/r03.