Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation

Authors :: L. McCarthy
S. P. DenBaars
L. Shen
Christiane Poblenz
Sarah L. Keller
A. Corrion
Man Hoi Wong
James S. Speck
Umesh K. Mishra
Tomas Palacios
Source :: 2006 64th Device Research Conference.
Publication Year :: 2006
Publisher :: IEEE, 2006.

Subjects :: Aluminum gallium nitride
chemistry.chemical_compound
Materials science
Passivation
chemistry
business.industry
Etching (microfabrication)
Electronic engineering
Optoelectronics
Gallium nitride
business

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