Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation

MLA

L. McCarthy, et al. “Improved Processing Technology for GaN-Capped Deeply-Recessed GaN HEMTs without Surface Passivation.” 2006 64th Device Research Conference, June 2006. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........79d1530f8290a91fa76286217737e534&authtype=sso&custid=ns315887.

APA

L. McCarthy, S. P. DenBaars, L. Shen, Christiane Poblenz, Sarah L. Keller, A. Corrion, Man Hoi Wong, James S. Speck, Umesh K. Mishra, & Tomas Palacios. (2006). Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation. 2006 64th Device Research Conference.

Chicago

L. McCarthy, S. P. DenBaars, L. Shen, Christiane Poblenz, Sarah L. Keller, A. Corrion, Man Hoi Wong, James S. Speck, Umesh K. Mishra, and Tomas Palacios. 2006. “Improved Processing Technology for GaN-Capped Deeply-Recessed GaN HEMTs without Surface Passivation.” 2006 64th Device Research Conference, June. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........79d1530f8290a91fa76286217737e534&authtype=sso&custid=ns315887.