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Improvement in MOS reliability by oxidation in ozone
- Source :
- Proceedings of 1994 VLSI Technology Symposium.
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- Using clean ozone in a new load-locked oxidation system, we made thin gate oxides with improved charge to breakdown characteristics (Q/sub bd/) and low surface state sensitise (D/sub it/). >
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of 1994 VLSI Technology Symposium
- Accession number :
- edsair.doi...........6fc6a6b4f45dd1e87ea4798b31287d11
- Full Text :
- https://doi.org/10.1109/vlsit.1994.324385