Improvement in MOS reliability by oxidation in ozone

MLA

Y. Sato, et al. “Improvement in MOS Reliability by Oxidation in Ozone.” Proceedings of 1994 VLSI Technology Symposium, Dec. 2002. EBSCOhost, https://doi.org/10.1109/vlsit.1994.324385.

APA

Y. Sato, Kanetake Takasaki, Toshiro Nakanishi, & M. Okuno. (2002). Improvement in MOS reliability by oxidation in ozone. Proceedings of 1994 VLSI Technology Symposium. https://doi.org/10.1109/vlsit.1994.324385

Chicago

Y. Sato, Kanetake Takasaki, Toshiro Nakanishi, and M. Okuno. 2002. “Improvement in MOS Reliability by Oxidation in Ozone.” Proceedings of 1994 VLSI Technology Symposium, December. doi:10.1109/vlsit.1994.324385.