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Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study
- Source :
- Materials Science Forum. :409-412
- Publication Year :
- 2001
- Publisher :
- Trans Tech Publications, Ltd., 2001.
Details
- ISSN :
- 16629752
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........6314264fd8ddbd68df32ed042758a55b