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Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study

Authors :
Andreas Fissel
Wo. Richter
Source :
Materials Science Forum. :409-412
Publication Year :
2001
Publisher :
Trans Tech Publications, Ltd., 2001.

Details

ISSN :
16629752
Database :
OpenAIRE
Journal :
Materials Science Forum
Accession number :
edsair.doi...........6314264fd8ddbd68df32ed042758a55b