Cite
Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study
MLA
Andreas Fissel, and Wo. Richter. “Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study.” Materials Science Forum, Jan. 2001, pp. 409–12. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........6314264fd8ddbd68df32ed042758a55b&authtype=sso&custid=ns315887.
APA
Andreas Fissel, & Wo. Richter. (2001). Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study. Materials Science Forum, 409–412.
Chicago
Andreas Fissel, and Wo. Richter. 2001. “Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study.” Materials Science Forum, January, 409–12. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........6314264fd8ddbd68df32ed042758a55b&authtype=sso&custid=ns315887.