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TaN Versus TiN Metal Gate Input/Output pMOSFETs: A Low-Frequency Noise Perspective
- Source :
- IEEE Transactions on Electron Devices. 65:3676-3681
- Publication Year :
- 2018
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2018.
-
Abstract
- It is shown that replacing a TiN effective work function metal by TaN results in a pronounced reduction of the low-frequency noise power spectral density (PSD) of thick-SiO2 input/output (I/O) DRAM peripheral pMOSFETs. The 1/ $f$ noise is originating from carrier number fluctuations, suggesting that the observed reduction results from a decrease of the oxide trap density in the SiO2. On the other hand, I/O pMOSFETs with a TiN gate deposited by different methods or used as a sacrificial gate in a gate replacement integration scheme yield a similar high 1/ $f$ noise PSD and corresponding oxide trap density.
- Subjects :
- 010302 applied physics
Input/output
Noise power
Materials science
business.industry
Infrasound
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Noise (electronics)
Electronic, Optical and Magnetic Materials
chemistry
Logic gate
0103 physical sciences
MOSFET
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
Tin
Metal gate
business
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 65
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........4b3e78092bc44b5cdce72cbc96309801