TaN Versus TiN Metal Gate Input/Output pMOSFETs: A Low-Frequency Noise Perspective

MLA

Romain Ritzenthaler, et al. “TaN Versus TiN Metal Gate Input/Output PMOSFETs: A Low-Frequency Noise Perspective.” IEEE Transactions on Electron Devices, vol. 65, Sept. 2018, pp. 3676–81. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........4b3e78092bc44b5cdce72cbc96309801&authtype=sso&custid=ns315887.

APA

Romain Ritzenthaler, Naoto Horiguchi, Eddy Simoen, Tom Schram, Barry O’Sullivan, Eugenio Dentoni Litta, & Cor Claeys. (2018). TaN Versus TiN Metal Gate Input/Output pMOSFETs: A Low-Frequency Noise Perspective. IEEE Transactions on Electron Devices, 65, 3676–3681.

Chicago

Romain Ritzenthaler, Naoto Horiguchi, Eddy Simoen, Tom Schram, Barry O’Sullivan, Eugenio Dentoni Litta, and Cor Claeys. 2018. “TaN Versus TiN Metal Gate Input/Output PMOSFETs: A Low-Frequency Noise Perspective.” IEEE Transactions on Electron Devices 65 (September): 3676–81. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........4b3e78092bc44b5cdce72cbc96309801&authtype=sso&custid=ns315887.