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Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy
- Source :
- Journal of Applied Physics. 83:4902-4908
- Publication Year :
- 1998
- Publisher :
- AIP Publishing, 1998.
-
Abstract
- Low-temperature photoluminescence spectra of Er-doped GaP grown by low-pressure organometallic vapor phase epitaxy was investigated under both above-band gap and below-band gap excitation conditions. Under all experimental conditions, similar Er-related spectra dominated by numerous sharp emission lines were obtained for the first time. The intensity dependence of the photoluminescence exhibits complicated behavior and is modeled using a unique energy-transfer process. The results obtained indicate that some Er-related luminescence centers are efficiently activated by direct excitation of electrons to some traps related to the luminescence centers.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 83
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........48a36ffd87fedf64b314fab9b7b090fe