Cite
Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy
MLA
N. Matsubara, et al. “Low-Temperature Photoluminescence Study on Er-Doped GaP Grown by Organometallic Vapor Phase Epitaxy.” Journal of Applied Physics, vol. 83, May 1998, pp. 4902–08. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........48a36ffd87fedf64b314fab9b7b090fe&authtype=sso&custid=ns315887.
APA
N. Matsubara, G. E. Stillman, Y. Fujiwara, Yoshikazu Takeda, & Anthony P. Curtis. (1998). Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 83, 4902–4908.
Chicago
N. Matsubara, G. E. Stillman, Y. Fujiwara, Yoshikazu Takeda, and Anthony P. Curtis. 1998. “Low-Temperature Photoluminescence Study on Er-Doped GaP Grown by Organometallic Vapor Phase Epitaxy.” Journal of Applied Physics 83 (May): 4902–8. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........48a36ffd87fedf64b314fab9b7b090fe&authtype=sso&custid=ns315887.