Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress

Authors :: Yuan-Lan Zhang
Jie Zhang
Hong-Ping Ma
Yan-Qing Chi
Hao-Ran Tian
Jian-Hua Liu
Qi-Bin Liu
Zhong-Guo Chen
Qingchun Jon Zhang
Source :: Microelectronics Reliability. 136:114630
Publication Year :: 2022
Publisher :: Elsevier BV, 2022.

Subjects :: Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials

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