Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress

MLA

Yuan-Lan Zhang, et al. “Failure Mechanism of 4H-SiC Junction Barrier Schottky Diodes under Harsh Thermal Cycling Stress.” Microelectronics Reliability, vol. 136, Sept. 2022, p. 114630. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........43ec4767452519ae2c63384da54655c3&authtype=sso&custid=ns315887.

APA

Yuan-Lan Zhang, Jie Zhang, Hong-Ping Ma, Yan-Qing Chi, Hao-Ran Tian, Jian-Hua Liu, Qi-Bin Liu, Zhong-Guo Chen, & Qingchun Jon Zhang. (2022). Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress. Microelectronics Reliability, 136, 114630.

Chicago

Yuan-Lan Zhang, Jie Zhang, Hong-Ping Ma, Yan-Qing Chi, Hao-Ran Tian, Jian-Hua Liu, Qi-Bin Liu, Zhong-Guo Chen, and Qingchun Jon Zhang. 2022. “Failure Mechanism of 4H-SiC Junction Barrier Schottky Diodes under Harsh Thermal Cycling Stress.” Microelectronics Reliability 136 (September): 114630. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........43ec4767452519ae2c63384da54655c3&authtype=sso&custid=ns315887.