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260 GHz F/sub T/, 280 GHz f/sub MAX/ AlSb/InAs HEMT technology
- Source :
- 63rd Device Research Conference Digest, 2005. DRC '05..
- Publication Year :
- 2005
- Publisher :
- IEEE, 2005.
-
Abstract
- In this paper, we report AlSb/InAs HEMT high frequency perfornance up to 260 GHz fT. The 0.1-μm gate length and 80-um total gate periphery devices exhibited a small-signal available gain of 10 dB at 100 GHz, and extrapolated fT and fmAx performance of 260 and 280 GHz, respectively at a drain voltage of 0.4 volts and drain current of 18 mA.
Details
- Database :
- OpenAIRE
- Journal :
- 63rd Device Research Conference Digest, 2005. DRC '05.
- Accession number :
- edsair.doi...........3f8716bf79bc469bed6b0bb068a966a6
- Full Text :
- https://doi.org/10.1109/drc.2005.1553146