260 GHz F/sub T/, 280 GHz f/sub MAX/ AlSb/InAs HEMT technology

MLA

R. Tsai, et al. “260 GHz F/Sub T/, 280 GHz f/Sub MAX/ AlSb/InAs HEMT Technology.” 63rd Device Research Conference Digest, 2005. DRC ’05, Jan. 2005. EBSCOhost, https://doi.org/10.1109/drc.2005.1553146.

APA

R. Tsai, C. Namba, P.H. Liu, P.S. Nam, A. Gutierrez, M.D. Lange, Ronald W. Grundbacher, W. Deal, L.J. Lee, & Rajinder Sandhu. (2005). 260 GHz F/sub T/, 280 GHz f/sub MAX/ AlSb/InAs HEMT technology. 63rd Device Research Conference Digest, 2005. DRC ’05. https://doi.org/10.1109/drc.2005.1553146

Chicago

R. Tsai, C. Namba, P.H. Liu, P.S. Nam, A. Gutierrez, M.D. Lange, Ronald W. Grundbacher, W. Deal, L.J. Lee, and Rajinder Sandhu. 2005. “260 GHz F/Sub T/, 280 GHz f/Sub MAX/ AlSb/InAs HEMT Technology.” 63rd Device Research Conference Digest, 2005. DRC ’05, January. doi:10.1109/drc.2005.1553146.