Calibrate MOSFET Micro-Stress Sensors for Electronic Packaging

Stress measurements in microelectronic packaging through the MOSFET devices have attracted great attentions because the measurement is in-situ and nondestructive. In this study, a new assembled methodology was designed and applied so that the calibration procedures on MOSFET stress sensors can be simpler and more accurate. Under mechanical, thermal, and thermo-mechanical coupling effects, parameters of the MOSFET devices were extracted based on linear relationships between drain current variation and the mechanical and/or thermal effects, and the results suggested that the MOSFET devices is a useful in-situ stress sensorsin electronic packaging. It is concluded that the newly experimental design and the extracted parameters are useful for MOSFET stress sensor's design and applications.