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Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress

Authors :
Sandra Veljković
Nikola Mitrović
Vojkan Davidović
Snežana Golubović
Snežana Djorić-Veljković
Albena Paskaleva
Dencho Spassov
Srboljub Stanković
Marko Andjelković
Zoran Prijić
Ivica Manić
Aneta Prijić
Goran Ristić
Danijel Danković
Source :
Journal of Circuits, Systems and Computers. 31
Publication Year :
2022
Publisher :
World Scientific Pub Co Pte Ltd, 2022.

Abstract

In this paper, the effects of successively applied static/pulsed negative bias temperature (NBT) stress and irradiation on commercial p-channel power vertical double-diffused metal-oxide semiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of these stresses on the power devices, the relative contributions of gate oxide charge ([Formula: see text]) and interface traps ([Formula: see text]) to threshold voltage shifts are shown and studied. It was shown that when irradiation without gate voltage is used, the duration of the pre-irradiation static NBT stress has a slightly larger effect on the radiation response of power VDMOS transistors. Regarding the fact that the investigated components are more likely to function in the dynamic mode than the static mode in practice, additional analysis was focused on the results obtained during the pulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stress after the irradiation, the effects of [Formula: see text] neutralization and [Formula: see text] passivation (usually related to annealing) are more enhanced than the components subjected to the static NBT stress, because only a high temperature is applied during the pulse-off state. It was observed that in devices previously irradiated with gate voltage applied, the decrease of threshold voltage shift is significantly greater during the pulsed NBT stress than during the static NBT stress.

Details

ISSN :
17936454 and 02181266
Volume :
31
Database :
OpenAIRE
Journal :
Journal of Circuits, Systems and Computers
Accession number :
edsair.doi...........367eaefc742e7ecd853cd9c325c8e9bb
Full Text :
https://doi.org/10.1142/s0218126622400035