Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress

MLA

Sandra Veljković, et al. “Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress.” Journal of Circuits, Systems and Computers, vol. 31, July 2022. EBSCOhost, https://doi.org/10.1142/s0218126622400035.

APA

Sandra Veljković, Nikola Mitrović, Vojkan Davidović, Snežana Golubović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Srboljub Stanković, Marko Andjelković, Zoran Prijić, Ivica Manić, Aneta Prijić, Goran Ristić, & Danijel Danković. (2022). Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. Journal of Circuits, Systems and Computers, 31. https://doi.org/10.1142/s0218126622400035

Chicago

Sandra Veljković, Nikola Mitrović, Vojkan Davidović, Snežana Golubović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, et al. 2022. “Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress.” Journal of Circuits, Systems and Computers 31 (July). doi:10.1142/s0218126622400035.