0.5 μm GaN RF power bar technology space evaluation

This paper describes the test plan and the main results achieved by UMS during a space evaluation of its second generation 0.5 μm GaN RF power bar technology, called GH50-20. The space evaluation tests results are summarised: a life time higher than 5.106 h @ 200 °C is found, SEE, TID and DD radiation hardness safe area were defined, and failure rate below 10 FIT @ 200 °C was determined. The results also include demonstration of representative integrated circuits up to 130 W RF power level when operated in L-band in continuous wave (CW) mode. The GH50-20 technology has successfully passed the space evaluation program and is deemed suitable for use in space.