0.5 μm GaN RF power bar technology space evaluation

MLA

M. Grunwald, et al. “0.5 Μm GaN RF Power Bar Technology Space Evaluation.” Microelectronics Reliability, vol. 114, Nov. 2020, p. 113894. EBSCOhost, https://doi.org/10.1016/j.microrel.2020.113894.

APA

M. Grunwald, J. Van de Casteele, S. Van Den Berghe, C. Gourdon, M. Hollmer, H. Stuhldreier, D. Bouw, Benoit Lambert, M. Raoult, Hervé Blanck, E. Durand, & Andrew Barnes. (2020). 0.5 μm GaN RF power bar technology space evaluation. Microelectronics Reliability, 114, 113894. https://doi.org/10.1016/j.microrel.2020.113894

Chicago

M. Grunwald, J. Van de Casteele, S. Van Den Berghe, C. Gourdon, M. Hollmer, H. Stuhldreier, D. Bouw, et al. 2020. “0.5 Μm GaN RF Power Bar Technology Space Evaluation.” Microelectronics Reliability 114 (November): 113894. doi:10.1016/j.microrel.2020.113894.