Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments

Subjects

Subjects :

Thesaurus (information retrieval)
Materials science
Deep level
Algan gan
Heterojunction
Plasma
Electrical and Electronic Engineering
Engineering physics
Electronic, Optical and Magnetic Materials

Details

ISSN :

21628750 and 21628742

Volume :

4

Database :

OpenAIRE

Journal :

ECS Solid State Letters

Accession number :

edsair.doi...........27158fc7e9a68cba207106506f8493c8

Full Text :

https://doi.org/10.1149/2.0011505ssl