Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments

MLA

Masahito Niibe, et al. “Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments.” ECS Solid State Letters, vol. 4, Feb. 2015, pp. P36–38. EBSCOhost, https://doi.org/10.1149/2.0011505ssl.

APA

Masahito Niibe, Yoshitaka Nakano, Retsuo Kawakami, Tatsuo Shirahama, & Takashi Mukai. (2015). Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments. ECS Solid State Letters, 4, P36–P38. https://doi.org/10.1149/2.0011505ssl

Chicago

Masahito Niibe, Yoshitaka Nakano, Retsuo Kawakami, Tatsuo Shirahama, and Takashi Mukai. 2015. “Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments.” ECS Solid State Letters 4 (February): P36–38. doi:10.1149/2.0011505ssl.