A novel RF switch device using InGaAs MOSFET technology

In this paper, a novel InGaAs metal oxide semiconductor field effect transistor (MOSFET) radio frequency (RF) switch device is demonstrated. The MOSFET RF switch device with 0.3 µm gate length and 10 nm Al 2 O 3 as gate dielectric shows insertion loss of 0.3 dB and isolation of more than 50 dB. A maximum drain current of 250 mA/mm, a peak transconductance of 370 mS/mm, a turn-on resistance of 2.4 O·mm and a drain current on-off (I on /I off ) ratio of over 1×106 are obtained. The small signal models of this MOSFET switch device are also described. Excellent agreement between measured and simulated demonstrates the validity of this model.