Cite
A novel RF switch device using InGaAs MOSFET technology
MLA
Jiahui Zhou, et al. “A Novel RF Switch Device Using InGaAs MOSFET Technology.” 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 2014. EBSCOhost, https://doi.org/10.1109/icsict.2014.7021191.
APA
Jiahui Zhou, Jingzhi Yang, Zhenhua Zeng, Xufang Zhang, Chang Hudong, Li Simin, Xu Yang, Qi Li, Honggang Liu, Haiou Li, & Xu Wenjun. (2014). A novel RF switch device using InGaAs MOSFET technology. 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). https://doi.org/10.1109/icsict.2014.7021191
Chicago
Jiahui Zhou, Jingzhi Yang, Zhenhua Zeng, Xufang Zhang, Chang Hudong, Li Simin, Xu Yang, et al. 2014. “A Novel RF Switch Device Using InGaAs MOSFET Technology.” 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), October. doi:10.1109/icsict.2014.7021191.