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Characterization of optimized properties for InGaZnO semiconductor and thin film transistor by oxygen partial pressure
- Source :
- Molecular Crystals and Liquid Crystals. 733:22-31
- Publication Year :
- 2022
- Publisher :
- Informa UK Limited, 2022.
- Subjects :
- General Materials Science
General Chemistry
Condensed Matter Physics
Subjects
Details
- ISSN :
- 15635287 and 15421406
- Volume :
- 733
- Database :
- OpenAIRE
- Journal :
- Molecular Crystals and Liquid Crystals
- Accession number :
- edsair.doi...........08c69cc9ad1d555c6cc9cfb4f9ba2251
- Full Text :
- https://doi.org/10.1080/15421406.2021.1971847