Characterization of optimized properties for InGaZnO semiconductor and thin film transistor by oxygen partial pressure

MLA

Huang Chuan-Xin, et al. “Characterization of Optimized Properties for InGaZnO Semiconductor and Thin Film Transistor by Oxygen Partial Pressure.” Molecular Crystals and Liquid Crystals, vol. 733, Jan. 2022, pp. 22–31. EBSCOhost, https://doi.org/10.1080/15421406.2021.1971847.

APA

Huang Chuan-Xin, Ding Xing-Wei, Liu Yun-Yun, Liang Lan-Ju, & Gao Ju. (2022). Characterization of optimized properties for InGaZnO semiconductor and thin film transistor by oxygen partial pressure. Molecular Crystals and Liquid Crystals, 733, 22–31. https://doi.org/10.1080/15421406.2021.1971847

Chicago

Huang Chuan-Xin, Ding Xing-Wei, Liu Yun-Yun, Liang Lan-Ju, and Gao Ju. 2022. “Characterization of Optimized Properties for InGaZnO Semiconductor and Thin Film Transistor by Oxygen Partial Pressure.” Molecular Crystals and Liquid Crystals 733 (January): 22–31. doi:10.1080/15421406.2021.1971847.