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On the growth mechanism of Li- and Na-doped Zn chalcogenides on GaAs(001) by means of molecular beam epitaxy
- Source :
- Journal of Crystal Growth. 159:376-379
- Publication Year :
- 1996
- Publisher :
- Elsevier BV, 1996.
-
Abstract
- Sharp and semicircular patterns were observed in RHEED during the MBE growth of Li- or Na-acceptor doped ZnSe and ZnS on GaAs(001). The radius and the separation between the diffraction circles vary with the change of the azimuth of the incident electron beam. Calculated diffraction patterns assuming that Li or Na atoms are arrayed one-dimensionally along the [110] direction of the crystal axis are in good agreement with the experimental results. We conclude that Li or Na atoms are incorporated at the [110] terrace steps, which prevents the further growth from the step edge.
- Subjects :
- Diffraction
Reflection high-energy electron diffraction
Chemistry
business.industry
Doping
Physics::Optics
Heterojunction
Crystal growth
Condensed Matter Physics
Molecular physics
Inorganic Chemistry
Crystal
Condensed Matter::Materials Science
Optics
Materials Chemistry
Cathode ray
business
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 159
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........01dc28bcce7722e6e8ee189ce05bee43