Cite
On the growth mechanism of Li- and Na-doped Zn chalcogenides on GaAs(001) by means of molecular beam epitaxy
MLA
S. Ishii, et al. “On the Growth Mechanism of Li- and Na-Doped Zn Chalcogenides on GaAs(001) by Means of Molecular Beam Epitaxy.” Journal of Crystal Growth, vol. 159, Feb. 1996, pp. 376–79. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........01dc28bcce7722e6e8ee189ce05bee43&authtype=sso&custid=ns315887.
APA
S. Ishii, Minoru Yoneta, Y. Hiroe, Hiroshi Saito, Masakazu Ohishi, & M. Ohura. (1996). On the growth mechanism of Li- and Na-doped Zn chalcogenides on GaAs(001) by means of molecular beam epitaxy. Journal of Crystal Growth, 159, 376–379.
Chicago
S. Ishii, Minoru Yoneta, Y. Hiroe, Hiroshi Saito, Masakazu Ohishi, and M. Ohura. 1996. “On the Growth Mechanism of Li- and Na-Doped Zn Chalcogenides on GaAs(001) by Means of Molecular Beam Epitaxy.” Journal of Crystal Growth 159 (February): 376–79. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........01dc28bcce7722e6e8ee189ce05bee43&authtype=sso&custid=ns315887.