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MoSe2/NbSe2Van der Waals heterostructure with efficiently gate-tunable optoelectronic properties
- Source :
- Proceedings of SPIE; December 2024, Vol. 13496 Issue: 1 p134960C-134960C-6, 1214647p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 13496
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Periodical
- Accession number :
- ejs68341583
- Full Text :
- https://doi.org/10.1117/12.3045916