MoSe2/NbSe2Van der Waals heterostructure with efficiently gate-tunable optoelectronic properties

MLA

Jiang, Yadong, et al. “MoSe2/NbSe2Van Der Waals Heterostructure with Efficiently Gate-Tunable Optoelectronic Properties.” Proceedings of SPIE, vol. 13496, no. 1, Dec. 2024, p. 134960C–134960C–6. EBSCOhost, https://doi.org/10.1117/12.3045916.

APA

Jiang, Y., Xue, B., Li, C., Wu, Z., Zhang, C., Peng, S., Han, J., He, M., Dong, X., Gou, J., Wang, J., & Jiang, Y. (2024). MoSe2/NbSe2Van der Waals heterostructure with efficiently gate-tunable optoelectronic properties. Proceedings of SPIE, 13496(1), 134960C–134960C–6. https://doi.org/10.1117/12.3045916

Chicago

Jiang, Yadong, Bin Xue, Chunyu Li, Zhiming Wu, Chaoyi Zhang, Silu Peng, Jiayue Han, et al. 2024. “MoSe2/NbSe2Van Der Waals Heterostructure with Efficiently Gate-Tunable Optoelectronic Properties.” Proceedings of SPIE 13496 (1): 134960C–134960C–6. doi:10.1117/12.3045916.