Molecular Beam Epitaxy of β-(InxGa1–x)2O3on β-Ga2O3(010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement

In this work, we investigate the growth of monoclinic β-(InxGa1–x)2O3alloys on top of (010) β-Ga2O3substrates via plasma-assisted molecular beam epitaxy. In particular, using different in situ(reflection high-energy electron diffraction) and ex situ(atomic force microscopy, X-ray diffraction, time-of-flight secondary ion mass spectrometry, and transmission electron microscopy) characterization techniques, we discuss (i) the growth parameters that allow for In incorporation and (ii) the obtainable structural quality of the deposited layers as a function of the alloy composition. In particular, we give experimental evidence of the possibility of coherently growing (010) β-(InxGa1–x)2O3layers on β-Ga2O3with good structural quality for xup to ≈ 0.1. Moreover, we show that the monoclinic structure of the underlying (010) β-Ga2O3substrate can be preserved in the β-(InxGa1–x)2O3layers for wider concentrations of In (x≤ 0.19). Nonetheless, the formation of a large amount of structural defects, like unexpected (102̅) oriented twin domains and partial segregation of In is suggested for x> 0.1. Strain relaxes anisotropically, maintaining an elastically strained unit cell along the a* direction vs plastic relaxation along the c* direction. This study provides important guidelines for the low-end side tunability of the energy bandgap of β-Ga2O3-based alloys and provides an estimate of its potential in increasing the confined carrier concentration of two-dimensional electron gases in β-(InxGa1–x)2O3/(AlyGa1–y)2O3heterostructures.