Molecular Beam Epitaxy of β-(InxGa1–x)2O3on β-Ga2O3(010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement

MLA

Mazzolini, Piero, et al. “Molecular Beam Epitaxy of β-(InxGa1–x)2O3on β-Ga2O3(010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement.” ACS Applied Materials & Interfaces, vol. 16, no. 10, Mar. 2024, pp. 12793–804. EBSCOhost, https://doi.org/10.1021/acsami.3c19095.

APA

Mazzolini, P., Wouters, C., Albrecht, M., Falkenstein, A., Martin, M., Vogt, P., & Bierwagen, O. (2024). Molecular Beam Epitaxy of β-(InxGa1–x)2O3on β-Ga2O3(010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement. ACS Applied Materials & Interfaces, 16(10), 12793–12804. https://doi.org/10.1021/acsami.3c19095

Chicago

Mazzolini, Piero, Charlotte Wouters, Martin Albrecht, Andreas Falkenstein, Manfred Martin, Patrick Vogt, and Oliver Bierwagen. 2024. “Molecular Beam Epitaxy of β-(InxGa1–x)2O3on β-Ga2O3(010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement.” ACS Applied Materials & Interfaces 16 (10): 12793–804. doi:10.1021/acsami.3c19095.