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High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer
- Source :
- IEEE Electron Device Letters; September 2023, Vol. 44 Issue: 9 p1404-1407, 4p
- Publication Year :
- 2023
-
Abstract
- In this letter, we apply an oxidation technique for p-GaN to a normally-off p-GaN /AlGaN/GaN HEMT to improve the threshold voltage and gate reliability. Oxygen-plasma and low-temperature Oxygen post-annealing treatment (OPAT) of p-GaN before the deposition of gate metal has introduced a 5 nm oxidation interlayer, resulting in a significant improvement in gate breakdown voltage, from 10.4 V to 20.6 V. Thanks to this interlayer, the threshold voltage of p-GaN gate HEMTs is increased from 1.9 V to 4.6 V, while an almost same on- state resistance and a higher drain breakdown voltage are obtained. Time-dependent gate breakdown measurement shows OPAT-HEMTs have a maximum on- state gate drive voltage of 9.2 V for a 10-year lifetime with a 63 % gate failure rate. In addition, a more stable threshold voltage under gate stress indicates the promising application of this technology in GaN power devices.
Details
- Language :
- English
- ISSN :
- 07413106 and 15580563
- Volume :
- 44
- Issue :
- 9
- Database :
- Supplemental Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Periodical
- Accession number :
- ejs63836898
- Full Text :
- https://doi.org/10.1109/LED.2023.3295064