Cite
High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer
MLA
Jia, Mao, et al. “High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer.” IEEE Electron Device Letters, vol. 44, no. 9, Sept. 2023, pp. 1404–07. EBSCOhost, https://doi.org/10.1109/LED.2023.3295064.
APA
Jia, M., Hou, B., Yang, L., Jia, F., Niu, X., Du, J., Chang, Q., Zhang, M., Wu, M., Zhang, X., Lu, H., Ma, X., & Hao, Y. (2023). High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer. IEEE Electron Device Letters, 44(9), 1404–1407. https://doi.org/10.1109/LED.2023.3295064
Chicago
Jia, Mao, Bin Hou, Ling Yang, Fuchun Jia, Xuerui Niu, Jiale Du, Qingyuan Chang, et al. 2023. “High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer.” IEEE Electron Device Letters 44 (9): 1404–7. doi:10.1109/LED.2023.3295064.