The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrOxNyGate Dielectrics

The dielectric properties and bias temperature instability characteristics of in situ nitrogen incorporated ZrOxNygate dielectrics were compared with those of ZrO2, HfO2, and HfOxNy. ZrOxNyshowed a much smaller capacitance equivalent oxide thickness (1.43 nm) than ZrO2(2.13 nm) and exhibited a turn-around effect under a positive gate stress bias in n-type metal oxide semiconductor field-effect transistor, which is consistent with HfOxNy. However, compared to HfOxNy, ZrOxNyshowed a significantly lower initial Vthshift under a positive gate stress bias due to the lower number of shallow bulk traps related to oxygen vacancies.